The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1976
Filed:
May. 14, 1974
Hitachi, Ltd., , JA;
Abstract
In a semiconductor integrated circuit device in which a plurality of regions each having a semiconductor element such as a PN junction diode and a transistor are isolated electrically from one another by PN junctions formed between the respective regions and a semiconductor isolation region, gold is introduced into the regions having the semiconductor elements and the isolation region while at least one diffused region heavily doped, for example, with phosphorus is formed in the isolation region adjacent to the region having the PN junction diode or the transistor thereby to prevent the breakdown voltage of the backwardly biased PN junction in the diode or the transistor from decreasing. Further by surrounding all the transistors, at least in one of which gold is diffused, formed in one integrated circuit with heavily doped N.sup.+-type regions an integrated circuit with transistors having a small variation in current amplification factor is obtained.