The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1976
Filed:
Jun. 14, 1973
Applicant:
Inventors:
Wolfgang Dietze, Munich, DT;
Andreas Kasper, Garching-Hochbrueck, DT;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DT;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29c / ;
U.S. Cl.
CPC ...
264 81 ; 264 83 ; 427 95 ;
Abstract
A method of producing shaped hollow semiconductor members, as of silicon or silicon carbide by depositing a select semiconductor material from a gaseous compound onto a heated graphite substrate which is first heat-treated above 1300.degree. C. in a flowing gas atmosphere, preferably a mixture of H.sub.2 and SiHCl.sub.3 so as to modify the surface characteristics of the substrate whereby the deposited semiconductor material does not interact with the substrate so that the substrate may be reused.