The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Feb. 16, 2022
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Joyce Chen, Taichung, TW;

Cc Liao, Taichung, TW;

Angela Wang, Taichung, TW;

Panny Chen, Taichung, TW;

Tim Huang, Shanghai, CN;

Bo Fu, Shanghai, CN;

Leo Shen, Taichung, TW;

Jinxiang Huang, Shanghai, CN;

Olga Chen, Taichung, TW;

Assignee:

SANDISK TECHNOLOGIES, INC., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 72/00 (2026.01); H10W 72/30 (2026.01); H10W 72/90 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 72/013 (2026.01); H10W 72/0198 (2026.01); H10W 72/322 (2026.01); H10W 72/354 (2026.01); H10W 72/951 (2026.01); H10W 90/732 (2026.01);
Abstract

A semiconductor device includes a first semiconductor die having a top planar surface and a second semiconductor die having a bottom planar surface and a top planar surface. A protective layer including a bottom planar surface and a top planar surface is positioned between the first semiconductor die and the second semiconductor die. An adhesive layer having a top planar surface and a bottom planar surface is between the protective layer and the second semiconductor die. A periphery of the top planar surface of the first semiconductor die is covered by a periphery of the bottom planar surface of the protective layer after cutting a portion of the protective layer that extended past the periphery of the surface of the first semiconductor die. The protective layer reduces the occurrence of peeling of the second semiconductor die and first semiconductor die coupled to the protective layer.


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Chen, Joyce. (2026). Semiconductor device with protective layer (U.S. Patent No. 12796535). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796535

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