The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Aug. 10, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Wei Peng, Hsinchu, TW;

Te-Hsin Chiu, Hsinchu, TW;

Wei-An Lai, Hsinchu, TW;

Ching-Wei Tsai, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10W 20/427 (2026.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01); H10P 14/3452 (2026.01);
Abstract

A method of making an integrated includes steps of etching an opening in an insulating mask to expose a first dummy contact on a backside of the integrated circuit, depositing a conductive material into the opening, the conductive material contacting a sidewall of the first dummy contact, and recessing the conductive material to expose an end of the first dummy contact. The method also includes steps of depositing an insulating material over the conductive material in the opening, removing the first dummy contact from the insulating mask to form a first contact opening, and forming a first conductive contact in the first contact opening, the first conductive contact being electrically connected to the conductive material.


Find Patent Forward Citations

Quick Actions:

Peng, Shih-Wei. (2026). Method of making integrated circuit with backside interconnections (U.S. Patent No. 12796439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796439

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