The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Oct. 13, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Tai-Cheng Hou, Tainan City, TW;

Da-Jun Lin, Kaohsiung City, TW;

Fu-Yu Tsai, Tainan City, TW;

Bin-Siang Tsai, Changhua County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/056 (2026.01); H10W 20/074 (2026.01); H10W 20/081 (2026.01);
Abstract

The present disclosure is related to a semiconductor device and a fabricating method thereof, and the semiconductor device includes a first dielectric layer and a first conductive structure. The first dielectric layer includes a stacked structure including a low-k dielectric layer, an etching stop layer, and a carbon-rich dielectric layer between the low-k dielectric layer and the etching stop layer, wherein a carbon concentration within the carbon-rich dielectric layer is above 15%. The first conductive structure is disposed in the first dielectric layer.


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Hou, Tai-Cheng. (2026). Semiconductor device and fabricating method thereof (U.S. Patent No. 12796436). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796436

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