The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Jun. 16, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jinkyu Kim, Suwon-si, KR;
Yunsuk Nam, Suwon-si, KR;
Gukhee Kim, Suwon-si, KR;
Junbeom Park, Suwon-si, KR;
Jaehyun Ahn, Suwon-si, KR;
Darong Oh, Suwon-si, KR;
Dongick Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device, includes: a substrate having a first region and a second region; a first device on the substrate, in the first region; a second device on the substrate, in the second region; a front side interconnection structure including a plurality of interconnection layers electrically connected to the first device and the second device, on a front side of the substrate; and a back side buried interconnection structure adjacently to a back side of the substrate opposing the front side. The back side buried interconnection structure includes a back side buried insulating layer in a trench recessed from a back side of the substrate toward the front side of the substrate, and a back side buried conductive layer in the back side buried insulating layer. The back side buried interconnection structure is located in the first region or the second region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile