The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Oct. 07, 2022
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Min-Hsun Hsieh, Hsinchu, TW;
Shih-An Liao, Hsinchu, TW;
Assignee:
Ennostar Corporation, Hsinchu City, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/857 (2025.01); H10H 20/01 (2025.01); H10H 20/831 (2025.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10H 20/857 (2025.01); H10H 20/01 (2025.01); H10H 20/8312 (2025.01); H10W 90/00 (2026.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01);
Abstract
A method of manufacturing a semiconductor device is disclosed. The method includes providing a substrate and forming a semiconductor stack on the substrate. The semiconductor stack includes a side surface. The method further includes forming an electrode on the side surface of the semiconductor stack and forming a resin on the electrode. Further, the method includes forming a conductive bump on the electrode.
Quick Actions:
Hsieh, Min-Hsun. (2026). Semiconductor device and manufacturing method thereof (U.S. Patent No. 12796194). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796194
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile