The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Sep. 22, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Hsuan Wang, Hsinchu City, TW;
Cheng Yu Huang, Hsinchu, TW;
Chun-Hao Chuang, Hsinchu City, TW;
Keng-Yu Chou, Kaohsiung City, TW;
Wen-Hau Wu, New Taipei City, TW;
Wei-Chieh Chiang, Yuanlin Township, Changhua County, TW;
Chih-Kung Chang, Zhudong Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A plurality of holes in a top surface of a silicon medium form a plurality of sub-meta lenses to result in multiple focal points rather than a single point (resulting from using a single meta lens). As a result, optical paths for incoming light are reduced as compared with a single optical path associated with a single meta lens, which in turn reduces angular response of incident photons. Thus, a pixel sensor including the plurality of sub-meta lenses experiences improved light focus and greater signal-to-noise ratio. Additionally, dimensions of the pixel sensor are reduced (particularly a height of the pixel sensor), which allows for greater miniaturization of an image sensor that includes the pixel sensor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile