The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Mar. 07, 2024
Applicant:

Db Hitek Co., Ltd., Bucheon-si, KR;

Inventors:

Woo Sung Choi, Cheongju-si, KR;

Man Lyun Ha, Mungyeong-si, KR;

Ju Hwan Jung, Seoul, KR;

Assignee:

DB HiTek Co., Ltd., Bucheon-si, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80373 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01);
Abstract

An image sensor has a gate that is electrically connected to a wiring layer and is formed at a side that overlaps a photodiode or storage diode in a semiconductor layer, so that an electrical charge can be easily transferred to a floating diode. The image sensor comprises: a semiconductor layer having a front surface and a back surface; a photodiode and a floating diode disposed apart from each other in the semiconductor layer; a first gate disposed on the front surface of the semiconductor layer and in an insulating layer; a second gate disposed on the front surface of the semiconductor layer and in the insulating layer, the second gate being configured to serve as a transfer transistor; the insulating layer disposed on the front surface of the semiconductor layer; and a wiring layer disposed in the insulating layer.


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Choi, Woo. (2026). Image sensor (U.S. Patent No. 12796131). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796131

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