The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Mar. 15, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hung-Yu Yen, Taipei, TW;

Ko-Feng Chen, Hsinchu City, TW;

Keng-Chu Lin, Ping-Tung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10P 14/60 (2026.01); H10P 14/694 (2026.01); H10P 50/64 (2026.01);
U.S. Cl.
CPC ...
H10D 62/116 (2025.01); H10D 30/014 (2025.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10P 14/6316 (2026.01); H10P 14/6319 (2026.01); H10P 14/69433 (2026.01); H10P 50/642 (2026.01);
Abstract

The present disclosure describes a semiconductor device that includes nanostructures on a substrate and a source/drain region in contact with the nanostructures. The source/drain region includes (i) a first epitaxial structure embedded in the substrate; (ii) a nitride layer on the first epitaxial structure; and a second epitaxial structure on the first epitaxial structure. The semiconductor device also includes a gate structure formed on the nanostructures.


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Yen, Hung-Yu. (2026). Film deposition and treatment process for semiconductor devices (U.S. Patent No. 12796021). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796021

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