The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Jun. 29, 2025
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Chih-Wei Chang, Tainan City, TW;

Da-Jun Lin, Kaohsiung City, TW;

Yao-Hsien Chung, Tainan City, TW;

Shih-Wei Su, Tainan City, TW;

Hao-Hsuan Chang, Kaohsiung City, TW;

Ting-An Chien, Tainan City, TW;

Bin-Siang Tsai, Changhua County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/8503 (2025.01);
Abstract

The invention provides a semiconductor structure, which comprises a GaN gallium nitride (GaN) layer, an aluminum gallium nitride (AlGaN) layer on the gallium nitride layer, a polarization boost layer on and in direct contact with the aluminum gallium nitride layer, and a gate liner layer on the polarization boost layer.


Find Patent Forward Citations

Quick Actions:

Chang, Chih-Wei. (2026). Semiconductor structure and the forming method thereof (U.S. Patent No. 12795978). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12795978

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