The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Dec. 19, 2023
Applicant:

Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;

Inventors:

Atsuya Sasaki, Kanagawa, JP;

Yukinori Nose, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01);
Abstract

A semiconductor device includes a first nitride semiconductor layer having a first surface, and a first recess formed in the first surface, a second nitride semiconductor layer provided inside the first recess, a first insulating film, covering the first nitride semiconductor layer and the second nitride semiconductor layer, and having a first opening exposing at least a portion of the second nitride semiconductor layer, and an interconnect layer making ohmic contact with the second nitride semiconductor layer through the first opening. The second nitride semiconductor layer has a second surface opposing the interconnect layer. A second recess, continuous with the first opening, is formed in the second surface. The interconnect layer makes direct contact with the second nitride semiconductor layer at an inner surface of the second recess.


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Sasaki, Atsuya. (2026). Semiconductor device and method for manufacturing semiconductor device (U.S. Patent No. 12795969). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12795969

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