The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Jun. 06, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Wei Zhou, Boise, ID (US);

Kunal R. Parekh, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 80/00 (2026.01); H10W 90/00 (2026.01); H10W 80/00 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10B 80/00 (2023.02); H10W 90/00 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/288 (2026.01); H10W 90/297 (2026.01); H10W 90/792 (2026.01);
Abstract

A semiconductor device with a through via between redistribution layers is disclosed. The semiconductor device includes a stack of semiconductor dies coupled with first contact pads on a first redistribution layer. The first redistribution layer further includes a second contact pad located outside the footprint of the die stack and circuitry coupling the second contact pad to the first contact pads. A gap fill is disposed around the stack of semiconductor dies. A second redistribution layer is disposed at the stack of semiconductor dies and the gap fill. The second redistribution layer includes third contact pads coupled with the stack of semiconductor dies, a fourth contact pad disposed beyond the footprint of the stack of semiconductor dies, fifth contact pads opposite the third and fourth contact pads, and circuitry coupling the contact pads. A through via is disposed through the gap fill coupling the second and fourth contact pads.


Find Patent Forward Citations

Quick Actions:

Zhou, Wei. (2026). Semiconductor device with a through via between redistribution layers (U.S. Patent No. 12795953). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12795953

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