Capacitive element and circuit structure including capacitive element(s)

Abstract

Disclosed are a capacitive element (CE) and a circuit structure including CE(s). The CE includes series-connected first, second, and third transistors (dual-gate n-type field effect transistors). Shared source/drain regions between the second and first transistors and between the first and third transistors are connected to capacitors, respectively. The first transistor is larger than the second and third transistors. The front gate of the first transistor and back gates of all three transistors receive a first control voltage (VC). The front gates of the second and third transistors receive a second control voltage (VC). VCand VCare concurrently switchable to concurrently switch the three transistors between on and off states. High and low voltage levels of VCare at a first positive voltage level and at ground. High and low voltage levels of VCare at the first positive voltage level and at a second positive voltage level.