The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Nov. 21, 2024
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

David Hopkins, Newark, CA (US);

Bradford Lyndaker, San Ramon, CA (US);

Alexei Marakhtanov, Albany, CA (US);

Felix Kozakevich, Sunnyvale, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32091 (2013.01); H01J 37/32146 (2013.01); H01J 37/32183 (2013.01);
Abstract

A plasma processing system for tuning a voltage setpoint for a multi-state pulsed RF signal, including: a chamber having an electrostatic chuck (ESC) disposed therein; an edge electrode that surrounds the ESC and is disposed below an edge ring surrounding the ESC; a first generator that applies a RF power to the ESC, defining a first multi-state pulsed RF signal; a second generator that applies a RF power to the edge electrode, defining a second multi-state pulsed RF signal having a first state and a second state, wherein for each state of the second multi-state pulsed RF signal, the second generator automatically introduces a phase adjustment to substantially match phase with a corresponding state of the first multi-state pulsed RF signal; and, wherein a voltage setpoint for the second state of the second multi-state pulsed RF signal is adjusted to tune the phase adjustment to a target phase adjustment setting.


Find Patent Forward Citations

Quick Actions:

Hopkins, David. (2026). Tuning voltage setpoint in a pulsed rf signal for a tunable edge sheath system (U.S. Patent No. 12793938). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12793938

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