The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Aug. 17, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Ying Lee, Hsinchu, TW;

Chieh Lee, Hsinchu, TW;

Chia-En Huang, Hsinchu County, TW;

Chi Lo, Hsinchu City, TW;

Yi-Ching Liu, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/30 (2013.01);
Abstract

A memory device is provided, including a first word line driver configured to activate a first word line. The first word line driver includes a first transistor configured to operate in response to a first control signal having a first voltage level to transmit a first word line voltage to a first word line and a second transistor coupled between the first word line and a supply voltage terminal and configured to be turned off in response to a second control signal having a second voltage level different from the first voltage level.


Find Patent Forward Citations

Quick Actions:

Lee, Chun-Ying. (2026). Memory device and operating method of the same (U.S. Patent No. 12793774). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12793774

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