The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Jul. 21, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chih-Tsung Shih, Hsinchu City, TW;

Wei-Kang Liu, Taichung City, TW;

Sui-Ying Hsu, New Taipei City, TW;

Jing-Hwang Yang, Hsinchu County, TW;

Yingkit Felix Tsui, Cupertino, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/124 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/124 (2013.01); G02B 2006/12107 (2013.01);
Abstract

A semiconductor structure includes a grating coupler structure, a circuit component separated from the grating coupler structure, an inter level dielectric layer, a capping layer over the inter level dielectric layer, and a passivation layer over the capping layer. The inter level dielectric layer has a first refractive index, the capping layer has second refractive index, and the passivation layer has a third refractive index. The second refractive index is greater than the first refractive index, and is greater than the third refractive index.


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Shih, Chih-Tsung. (2026). Semiconductor structure with multi-layers film having diverse indices of refraction and specific relative thicknesses (U.S. Patent No. 12791789). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12791789

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