The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

May. 22, 2024
Applicant:

Winbond Electronics Corp., Taichung City, TW;

Inventor:

Che-Fu Chuang, Changhua City, TW;

Assignee:

Winbond Electronics Corp., Taichung City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/069 (2026.01);
Abstract

A method for forming a semiconductor structure, comprising: forming a stacked structure on a substrate, the stacked structure including a cap structure including first and second cap layers of different materials; sequentially forming first and second spacer material layers on the substrate and the stacked structure; removing a first portion of the second spacer material layer and a first portion of the first spacer material layer to expose the second cap layer; removing a second portion of the second spacer material layer, so that a portion of the second cap layer protrudes from the second spacer material layer; forming a hard mask pattern self-aligned with the portion of the second cap layer; and using the hard mask pattern as a mask, removing a third portion of the second spacer material layer to form a spacer structure on the sidewall of the stacked structure.


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Chuang, Che-Fu. (2026). Method for forming semiconductor structure (U.S. Patent No. 12787732). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787732

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