The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Dec. 18, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chen Zhang, Santa Clara, CA (US);

Ruilong Xie, Niskayuna, NY (US);

Terence B. Hook, Jericho Center, VT (US);

Lei Zhuang, Ridgefield, CT (US);

Junli Wang, Slingerlands, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/80 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H10D 8/045 (2025.01); H10D 8/422 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10W 20/427 (2026.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a stacked field effect transistor (FET) formed on a substrate and connected to a backside metal line of a backside power distribution network (BSPDN). The semiconductor device also includes a lateral junction diode co-integrated with the stacked nanosheet FET.


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Zhang, Chen. (2026). Semiconductor device with lateral diodes and stacked fets (U.S. Patent No. 12787421). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787421

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