The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Mar. 11, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Han Yeh, Hsinchu, TW;
Yu-Lien Huang, Hsinchu, TW;
Yuan-Sheng Huang, Taichung, TW;
Yung-Cheng Lu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A fabrication method includes: forming a gate structure between an interlayer dielectric (ILD) layer on a substrate; forming a metal cap layer over the gate structure; treating a substrate surface in an inductively coupled plasma (ICP) chamber, the treating comprising oxidation of a surface of the metal cap layer and reducing oxygen (O) content in a top surface of the ILD layer; performing inhibition operations in a furnace to prevent SiN from growing on the ILD layer; performing an anneal treatment on the substrate in the furnace; and selectively growing a SiN dielectric cap over the gate structure in the furnace.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile