The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Dec. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiao-Chun Chang, Hsinchu County, TW;
Guan-Jie Shen, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure describes semiconductor devices and methods for forming the same. A semiconductor device includes nanostructures over a substrate and a source/drain region in contact with the nanostructures. The source/drain region is doped with a first-type dopant. The semiconductor device also includes a counter-doped structure in contact with the substrate and the source/drain region. The counter-doped structure is doped with a second-type dopant opposite to the first-type dopant.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile