The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Sep. 29, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jhon-Jhy Liaw, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first circuit cell having first transistors, and a second circuit cell having second transistors and arranged with the first circuit cell in an X-direction. Each of the first transistors includes first nanostructures vertically stacked from each other. Each of the second transistors includes second nanostructures vertically stacked from each other. A cell pitch of the first circuit cell and a cell pitch of the second circuit cell in a Y-direction are the same. A first pitch of the first nanostructures in the Z-direction and a second pitch of the second nanostructures in the Z-direction are the same. A first thickness of the first nanostructures in the Z-direction is greater than a second thickness of the second nanostructures in the Z-direction. A first width of the first nanostructures in the Y-direction is greater than a second width of the second nanostructures in the Y-direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile