The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Jul. 14, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Shih-Yen Lin, New Taipei City, TW;
PO-Cheng Tsai, Taichung City, TW;
Che-Jia Chang, Taichung City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A semiconductor device includes a 2-D material channel layer, a gate structure, and source/drain electrodes. The gate structure is over a channel region of the 2-D material channel layer. The source/drain electrodes are over source/drain regions of the 2-D material channel layer, respectively. Each of the source/drain electrodes includes a 2-D material electrode and a metal electrode. The 2-D material electrode is below a bottom surface of a corresponding one of the source/drain regions of the 2-D material channel layer. The metal electrode is over a top surface of the corresponding one of the source/drain regions of the 2-D material channel layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile