The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Dec. 15, 2023
International Business Machines Corporation, Armonk, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a first gate-all-around field effect transistor, which in turn includes an upper nanosheet and a first gate structure. The first gate structure is laterally confined by first gate spacers and surrounds the upper nanosheet. The first gate structure includes a first gate dielectric on the upper nanosheet and a u-shaped first high-k material on a lower portion of the first gate spacers and on the first gate dielectric.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile