The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Dec. 14, 2023
National Yang Ming Chiao Tung University, Hsinchu City, TW;
Edward Yi Chang, Hsinchu City, TW;
Yueh-Chin Lin, Hsinchu City, TW;
He-Yu Yang, Hsinchu City, TW;
Howie Tseng, Hsinchu City, TW;
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu City, TW;
Abstract
A method for manufacturing a high electron mobility transistor (HEMT), which comprises the following steps: providing a substrate, wherein a semiconductor layer is formed on the substrate, and a source electrode and a drain electrode are formed on the semiconductor layer; forming a passivation layer on the source electrode and the drain electrode; etching the passivation layer to form a through hole between the source electrode and the drain electrode, wherein a region of the semiconductor layer is exposed through the through hole; forming a photoresist layer on the passivation layer, wherein a first sub-region of the region of the semiconductor layer is covered by the photoresist layer, and a second sub-region of the region of the semiconductor layer is not covered by the photoresist layer; forming a metal layer on the second sub-region to form a gate electrode; and removing the passivation layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile