The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Jan. 04, 2022
Mitsubishi Electric Corporation, Tokyo, JP;
Koichi Nishi, Tokyo, JP;
Shinya Soneda, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Katsumi Nakamura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Hysteresis of gate leakage is reduced in a semiconductor device with a structure including embedded electrodes below gate trench electrodes. A semiconductor device includes an active trench gate formed in a trench coming in contact with an emitter layer, a base layer, and a carrier storage layer to reach a drift layer. The active trench gate includes: a gate trench insulating film formed on an inner wall of the trench; and a gate trench electrode, and an embedded electrode below the gate trench electrode, the gate trench electrode and the embedded electrode being formed on the gate trench insulating film in the trench and being insulated from each other. The embedded electrode is lower in phosphorus concentration than the gate trench electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile