Semiconductor device

Abstract

In some embodiments, the techniques described herein relate to a multilayered semiconductor diode device including: a substrate including silicon carbide (SiC); an epitaxial drift layer including a first semiconductor oxide material or SiC on the substrate; an epitaxial channel layer including a second semiconductor oxide material on the epitaxial drift layer; and a metal layer above the epitaxial drift layer to form a Schottky barrier junction. The epitaxial channel layer and the Schottky metal layer form a mesa structure contacting a sidewall layer. In some embodiments, a method of forming a multilayered semiconductor diode device includes: providing a substrate including silicon carbide (SiC); forming an epitaxial drift layer; forming an epitaxial channel layer; forming a metal layer to form a Schottky barrier junction; etching the epitaxial channel layer and the metal layer to form a mesa structure; and forming a sidewall layer contacting a wall of the mesa structure.