The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
May. 29, 2023
Fuji Electric Co., Ltd., Kawasaki, JP;
Yuichi Hashizume, Matsumoto-city, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A silicon carbide semiconductor device has an active region, a first-conductivity-type region, and an edge termination region. The active region has first second-conductivity-type regions, a silicide film, and a first electrode; the edge termination region has a second second-conductivity-type region. The active region is configured by an ohmic region in which the silicide film is in contact with the first second-conductivity-type region, non-operating regions in which the first electrode is in contact with the first second-conductivity-type regions, and a Schottky region in which the first electrode is in contact with the first-conductivity-type region. The ohmic region, the non-operating regions, and the Schottky regions are provided in a striped pattern. A bottom surface of the silicide film in the ohmic region is positioned deeper than is an interface between the first electrode and the first second-conductivity-type regions in each of the plurality of non-operating regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile