The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Feb. 28, 2023
Applicant:

Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;

Inventors:

Yukinori Nose, Kanagawa, JP;

Tsuyoshi Nakajima, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H10D 1/692 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 84/811 (2025.01);
Abstract

A semiconductor device includes a substrate having a first upper surface; a semiconductor layer provided on the substrate; a first insulator layer provided over the semiconductor layer and having a second upper surface; a lower electrode provided over the first insulator layer; a dielectric layer provided on the lower electrode; and an upper electrode provided on the dielectric layer. A difference between a maximum value and a minimum value of a distance between the first upper surface of the substrate and the second upper surface of the first insulator layer is smaller than a thickness of the semiconductor layer.


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Nose, Yukinori. (2026). Semiconductor device (U.S. Patent No. 12787313). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787313

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