The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Nov. 09, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Chi-Wen Chen, Hsinchu City, TW;

Chun-Huai Li, Hsinchu City, TW;

Chih-Hung Chen, Hsinchu City, TW;

Chun-Hung Hung, Hsinchu City, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32073 (2013.01); H01J 37/32348 (2013.01); H01J 37/3244 (2013.01); H01J 37/32458 (2013.01); H01J 37/32981 (2013.01); H01J 2237/327 (2013.01); H01J 2237/332 (2013.01);
Abstract

A passivation equipment includes a chamber housing and a splitter disposed in the chamber housing. The splitter divides the chamber housing into a first chamber and a second chamber, where the second chamber accommodates a semiconductor device. The passivation equipment further includes a first intake tube connected to the first chamber to insert a reacting gas, a plasma producing unit disposed in the first chamber, and a pressure detecting unit connected to the first chamber.


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Chen, Chi-Wen. (2026). Passivation equipment and passivation method for semiconductor device (U.S. Patent No. 12785037). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12785037

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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