The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Aug. 15, 2023
Micron Technology, Inc., Boise, ID (US);
Jae Kyu Choi, Boise, ID (US);
Jin Yue, Boise, ID (US);
Kyubong Jung, Boise, ID (US);
Albert Fayrushin, Boise, ID (US);
Jae Young Ahn, Boise, ID (US);
Jun Kyu Yang, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Memory array structures, and methods of their formation; might include a first memory cell having a first control gate and an adjacent first portion of a charge-blocking structure, a second memory cell having a second control gate and an adjacent second portion of the charge-blocking structure, and a first dielectric material between the first control gate and the second control gate, and adjacent to a third portion of the charge-blocking structure that is between the first and second portions of the charge-blocking structure. The third portion of the charge-blocking structure might include a second dielectric material and a third dielectric material different than the second dielectric material, and the first portion of the charge-blocking structure and the second portion of the charge-blocking structure might each include the third dielectric material and a fourth dielectric material different than the second dielectric material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile