The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
May. 20, 2022
United Microelectronics Corp., Hsin-Chu City, TW;
Yen-Ting Pan, New Taipei City, TW;
Chung-Yi Chiu, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A method for simulating a three-dimensional (3D) feature profile of a semiconductor device disposed in a substrate is disclosed. The method utilizes a scanning electron microscope (SEM) image of a feature pattern within a material layer. The feature pattern has an inner edge and an outer edge. The positions of these edges are first identified, followed by the definition of a side edge region. A side edge model is then automatically generated to simulate a side edge profile of the feature pattern. Finally, a 3D feature profile is automatically output based on the positions of the edges, the thickness of the material layer, and the side edge profile. This 3D feature profile is then used for a process judgment of the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile