The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Feb. 08, 2024
Globalwafers Co., Ltd., Hsinchu, TW;
Carissima Marie Hudson, St. Charles, MO (US);
Jaewoo Ryu, Plano, TX (US);
Young Gil Jeong, Frisco, TX (US);
Chun-Sheng Wu, Hsinchu City, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
Methods for preparing a single crystal silicon ingot with reduced radial resistivity variation are disclosed. The silicon melt is counter-doped in a plurality of batches while growing the single crystal silicon ingot. The amount of second dopant in each batch may be controlled to be less than a maximum amount that is determined based on a predetermined target minimum resistivity, a predetermined target maximum radial resistivity gradient, and a baseline radial resistivity gradient that occurs without counter-doping.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile