The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Mar. 11, 2022
Applicant:

Jusung Engineering Co., Ltd., Gwangju-Si, KR;

Inventors:

Jeong Heo, Gwangju-Si, KR;

Duck Ho Kim, Gwangju-Si, KR;

Yong Hyun Kim, Gwangju-Si, KR;

Chang Su Mha, Gwangju-Si, KR;

Chang Kyun Park, Gwangju-Si, KR;

Yong Hyun Lee, Gwangju-Si, KR;

Chul Joo Hwang, Gwangju-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/02 (2006.01); C23C 16/30 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/0272 (2013.01); C23C 16/303 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01);
Abstract

The present disclosure relates to a thin film forming method, and more particularly, to a thin film forming method for forming a gallium nitride thin film. In accordance with an exemplary embodiment, a thin film forming method includes: loading a substrate into a process space of a chamber; and forming a gallium nitride thin film on the substrate, and the forming of the gallium nitride thin film includes: supplying a source gas containing gallium onto the substrate; supplying a reactant gas containing nitrogen onto the substrate; and activating and supplying a post-treatment gas containing hydrogen onto the substrate.


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Heo, Jeong. (2026). Thin film formation method (U.S. Patent No. 12781344). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12781344

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