Microelectronic devices including contact structures, and related memory devices, electronic systems, and methods

Abstract

A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures horizontally extending in parallel in a first direction and horizontally separated from one another in a second direction by dielectric slot structures. At least one of the block structures comprises a stadium structure comprising opposing staircase structures each having steps comprising edges of the tiers, and conductive contact structures vertically extending to and in contact with at least some of the conductive structures at the steps, the conductive contact structures positioned proximate horizontal boundaries of the stadium structure in the second direction. Related memory devices, electronic systems, and methods are also described.