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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12777909 B1

PDFFull Text
Date of Patent:
Oct. 27, 2026

Filed:

Jun. 16, 2023

Back end dielectric-based memory structure in a semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yun-Feng Kao, New Taipei City, TW;

Katherine H. Chiang, New Taipei City, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Harrity & Harrity, LLP

Primary Examiner:

Timor Karimy

Int. Cl.
CPC ...
H10W 20/20 (2026.01); G11C 13/00 (2006.01); H10B 12/00 (2023.01); H10B 20/25 (2023.01); H10B 63/00 (2023.01); H10B 80/00 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); G11C 13/0069 (2013.01); H10B 12/315 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02); H10B 20/25 (2023.02); H10B 63/34 (2023.02); H10B 80/00 (2023.02); H10W 20/435 (2026.01);
Abstract

A semiconductor device may include a non-volatile memory structure that may be formed in a back end of line (BEOL) region of a semiconductor device. The non-volatile memory structure may include a dielectric-based one-time programmable (OTP) anti-fuse memory structure or a dielectric-based resistive random access memory (ReRAM), among other examples. The non-volatile memory structure may be selectively programmed based on modifying an electrical resistance of the non-volatile memory structure, and may retain data stored in the non-volatile memory structure even when electrical power is removed from the semiconductor device.

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Kao, Yun-Feng. (2026). Back end dielectric-based memory structure in a semiconductor device (U.S. Patent No. 12777909). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777909

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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