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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12777908 B1

PDFFull Text
Date of Patent:
Oct. 27, 2026

Filed:

Mar. 30, 2023

Semiconductor structure having back-side interconnect and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Jhon Jhy Liaw, Hsinchu County, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Cooper Legal Group, LLC

Primary Examiner:

Caleb E Henry

Assistant Examiner:

Pratiksha Jayant Lohakare

Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract

A method includes forming a plurality of semiconductor sheets on a front-side of a semiconductive layer; forming a gate strip surrounding each of the semiconductor sheets; forming a plurality of source/drain structures on either side of each of the semiconductor sheets; doping the semiconductive layer with a dopant, the dopant has a same conductivity type as the source/drain structures; forming a power supply voltage line on a back-side of the doped semiconductive layer.

Find Patent Forward Citations

Liaw, Jhon. (2026). Semiconductor structure having back-side interconnect and manufacturing method thereof (U.S. Patent No. 12777908). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777908

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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