The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Jan. 11, 2024
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shoi Suzuki, Miyagi, JP;

Taku Gohira, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/00 (2026.01); H01J 37/32 (2006.01); H10P 50/28 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
H10P 50/73 (2026.01); H01J 37/32449 (2013.01); H10P 50/283 (2026.01); H10P 76/405 (2026.01); H10P 76/4085 (2026.01); H01J 37/32724 (2013.01); H01J 2237/3346 (2013.01);
Abstract

An etching method includes providing a substrate including a first region and a second region below the first region, the first region containing a first material and having an opening, and the second region containing a second material different from the first material, and etching the second region through the opening while forming a carbon-containing layer and a metal-containing layer below the carbon-containing layer on a sidewall of the opening, by supplying, onto the substrate, plasma generated from a processing gas containing a carbon-containing gas, a metal halide gas, and a halogen scavenging gas that scavenges halogen.


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Suzuki, Shoi. (2026). Etching method and plasma processing apparatus (U.S. Patent No. 12777863). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777863

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