Semiconductor device structure and manufacturing method thereof

Abstract

A method of manufacturing a semiconductor device structure can include: forming a first gate dielectric layer on a first region of a semiconductor substrate, and forming a second gate dielectric layer on a second region of the semiconductor substrate; forming a conductive layer on the first and second gate dielectric layers; forming a barrier layer on the conductive layer; patterning the barrier layer to form a barrier pattern; etching the conductive layer to form first and second gates using the barrier pattern as a mask; forming a photolithography pattern on the semiconductor substrate, where the photolithography pattern exposes the well implantation area of the first region and a portion of the barrier pattern on the first gate; forming a well region in the well implantation area using the lithography pattern and the exposed barrier pattern as masks; and removing the photolithography pattern and the barrier pattern.