The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Apr. 05, 2023
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Yaswanth Rangineni, Beaverton, OR (US);

Sunil Kapoor, Vancouver, WA (US);

Edward Augustyniak, Tualatin, OR (US);

Yukinori Sakiyama, West Linn, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 7/38 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H03H 7/38 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); C23C 16/458 (2013.01); C23C 16/4583 (2013.01); C23C 16/505 (2013.01); H01J 37/32091 (2013.01); H01J 37/32174 (2013.01); H01J 37/32183 (2013.01); H01J 37/32899 (2013.01);
Abstract

Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. The housing includes a pedestal, a showerhead situated above the pedestal to face the pedestal, and a ceiling located above the showerhead. The system further includes a radio frequency (RF) transmission line coupled to the plasma chamber for transferring a modified RF signal to the showerhead. The system includes a shunt circuit coupled within a pre-determined distance from the ceiling. The shunt circuit is coupled to the RF transmission line for negating the impedance associated with the parasitic capacitance within the housing.


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Rangineni, Yaswanth. (2026). Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor (U.S. Patent No. 12776757). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12776757

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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