The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Aug. 19, 2024
Sandisk Technologies, Inc., Milpitas, CA (US);
Albert Bor Kai Chen, Milpitas, CA (US);
Longju Liu, Fremont, CA (US);
Jiahui Yuan, Fremont, CA (US);
Anirudh Amarnath, San Jose, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
Technology for multi sense time valley search in NAND memory. The memory cells are sensed multiple times for a single charging of the sense nodes. Also, the voltage to the control gates of the memory cells may be held at the same magnitude for each sensing. Optionally, the control gate voltage may be changed with the memory cells again being sensed multiple times for a single charging of the sense nodes. Each sensing will test for a different Vt in the valley scan. A valley point between two Vt distributions is determined based on the sensing. Substantial time may be saved while still providing for a precise search for the valley point.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile