Memory device and operating method thereof, and memory system

Abstract

The present application provides memory devices, operating methods, and memory systems. An example memory device includes: a first, second, and third top select line, multiple word lines, multiple memory cells, and a peripheral circuit configured to: in a process of programming the multiple memory cells coupled to a selected word line of the multiple word lines, dynamically adjust an application approach of a select voltage on the second top select line depending on a distance between the selected word line and the third top select line; wherein when the first top select line reaches its select voltage is different from when the third top select line reaches its select voltage, and when the second top select line reaches its select voltage is not earlier than when the first top select line reaches its select voltage and not later than when the third top select line reaches its select voltage.