Memory pillar selection transistor evaluation

Abstract

Methods, systems, and devices for memory pillar selection transistor evaluation are described. A memory system may be configured to monitor threshold voltage characteristics of pillar selection transistors, which may include evaluations relative to certain subsets of the pillar selection transistors. For example, an activation voltage may be applied to the pillar selection transistors to determine whether threshold voltages associated with each subset of pillar selection transistors have shifted. Determining whether the threshold voltages have shifted may include determining whether an access parameter has been satisfied, such as a duration to program memory cells. For example, a relatively long duration may indicate that channels associated with pillar selection transistors have become less conductive for a given activation voltage.