The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Aug. 24, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dong-Hyub Lee, Suwon-si, KR;

Jeong-Gil Kim, Suwon-si, KR;

Hyuck Shin, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H10P 74/20 (2026.01);
U.S. Cl.
CPC ...
G03F 7/70591 (2013.01); G03F 7/70033 (2013.01); H10P 74/203 (2026.01);
Abstract

A monitoring system for manufacturing a semiconductor device comprises a source module, an optical module including a collector collecting and reflecting extreme ultraviolet generated light from the source module, an illumination optical system including a field facet mirror, and a projection optical system transferring the extreme ultraviolet light reflected from a reticle to a substrate. A calculating module calculates a degradation rate of the optical module, and a method comprises respectively generating a reference image profile and an (N)th image profile through the second sensor module by correcting the far field image of the extreme ultraviolet with respect to the intensity of the extreme ultraviolet at a reference time point and an (N)th time point after the reference time point, and calculating the degradation rate of the optical module by using a ratio of the reference image profile and the (N)th image profile by the calculation module.


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Lee, Dong-Hyub. (2026). Monitoring system for manufacturing semiconductor device and monitoring method for manufacturing the semiconductor device using the same (U.S. Patent No. 12775217). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12775217

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