Method for manufacturing semiconductor devices without thickness deviation

Abstract

A method for manufacturing semiconductor device includes preparing a semiconductor wafer including a first semiconductor substrate and a first through silicon via; removing a trim region of the first semiconductor substrate along an edge portion of the semiconductor wafer to form a remaining edge region; attaching the semiconductor wafer to a carrier substrate, wherein the remaining edge region is in contact with the carrier substrate; forming an edge protection layer along the remaining edge region; exposing the first through silicon via by removing a predetermined depth of the first semiconductor substrate; forming a second final passivation layer to expose the upper surface of the first through silicon via; forming a plurality of first upper connection pads on the second final passivation layer; and dicing the semiconductor wafer into a plurality of first semiconductor chips.