The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 28, 2024
Zero-stress zones and controlled-fracturing zones in the passivation layer of a semiconductor device
Nexperia B.v., Nijmegen, NL;
Hamza Hanif Patel, Manchester, GB;
Nivasan Yogeswaran, Manchester, GB;
Mark Andrzej Gajda, Manchester, GB;
Nexperia B.V., Nijmegen, NL;
Abstract
A method of manufacturing a semiconductor device, such as a power MOSFET, including: forming a metal layer, the metal layer including an edge where the metal layer ends; forming a passivation layer at a layer higher than the metal layer; and forming a passivation slot in the passivation layer, the passivation slot is at least partially positioned over the metal layer, and the passivation slot divides the passivation layer into multiple regions, each region experiences a reduced tensile stress σas a result of the passivation slot.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile