The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Dec. 12, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chen Zhang, Santa Clara, CA (US);

Ruilong Xie, Niskayuna, NY (US);

Debarghya Sarkar, Latham, NY (US);

Junli Wang, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10W 20/427 (2026.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/01 (2025.01); H10D 64/017 (2025.01);
Abstract

A semiconductor structure is provided that includes a backside dielectric cap which seals the gate structure thus preventing gate structure exposure during backside processing. The presence of the backside dielectric cap helps to mitigate gate to direct backside source/drain contact shorts. The backside dielectric cap is formed during frontside processing.


Find Patent Forward Citations

Zhang, Chen. (2026). Backside dielectric cap (U.S. Patent No. 12772825). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772825

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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