The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

May. 14, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Gurtej S. Sandhu, Boise, ID (US);

Sony Varghese, Manchester-by-the-Sea, MA (US);

John A. Smythe, Boise, ID (US);

Hyun Sik Kim, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 90/00 (2026.01); B29C 41/08 (2006.01); B29K 83/00 (2006.01); H10P 14/22 (2026.01); H10P 14/46 (2026.01); H10P 14/60 (2026.01); H10P 14/61 (2026.01); H10W 10/00 (2026.01); H10W 10/10 (2026.01); H10W 10/17 (2026.01); H10W 20/00 (2026.01); B29C 35/08 (2006.01); B32B 3/26 (2006.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H10P 90/1906 (2026.01); B29C 41/08 (2013.01); H10P 14/22 (2026.01); H10P 14/46 (2026.01); H10P 14/6326 (2026.01); H10P 14/6346 (2026.01); H10P 14/6686 (2026.01); H10P 14/6689 (2026.01); H10W 10/0145 (2026.01); H10W 10/17 (2026.01); H10W 10/181 (2026.01); H10W 20/056 (2026.01); H10W 20/098 (2026.01); B29C 2035/0827 (2013.01); B29K 2083/00 (2013.01); B32B 3/266 (2013.01); H10P 14/61 (2026.01); H10P 72/0448 (2026.01);
Abstract

Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material.


Find Patent Forward Citations

Sandhu, Gurtej. (2026). Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material (U.S. Patent No. 12772810). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772810

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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