The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Dec. 19, 2023
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01); H10P 14/20 (2026.01); H10P 50/24 (2026.01);
U.S. Cl.
CPC ...
H10P 14/3438 (2026.01); C30B 25/165 (2013.01); C30B 25/205 (2013.01); C30B 29/06 (2013.01); H10P 14/2905 (2026.01); H10P 14/2926 (2026.01); H10P 14/3411 (2026.01); H10P 50/244 (2026.01);
Abstract
A method for epitaxially growing a phosphorus doped silicon layer on a substrate is disclosed. Embodiments of the presently described method comprise exposing a substrate to a silicon precursor and to a phosphorus precursor, wherein the exposure of the substrate to the phosphorus precursor is done during an overlapping period with the exposure to the silicon precursor.
Marozas, Brendan. (2026). Method for depositing phosphorus containing silicon layer (U.S. Patent No. 12772752). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772752
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile