The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
May. 13, 2022
Intel Corporation, Santa Clara, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Memory devices having optimized phase change memory (PCM) structures to improve nucleation time variation and methods for forming the phase change memory structures. The PCM structures are composed of layers including a first electrode layer, a PCM layer having a first interface with the first electrode layer comprising a first electrode/PCM interface, and a second electrode layer, having a second interface with the phase change material layer comprising a PCM/second electrode interface. The first electrode/PCM interface and the PCM/second electrode interface are non-flat and configured to reduce statistical variation of nucleation time. Techniques/processes for forming these interfaces include creating serrated or rough edges, forming patterned shapes, and attaching nanodots. The average contact angle of heterogenous nucleation is significantly reduced from the flat surface used in conventional PCM structures, enabling the new PCM structure to exhibit a more controlled nucleation time with less statistical variation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile